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FGA120N30D 300V PDP IGBT
June 2006
FGA120N30D
300V PDP IGBT
Features
* High Current Capability * Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 25A * High Input Impedance
Description
Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential.
C
G
TO-3P
GCE
E
TC = 25C unless otherwise noted
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM IF IFM PD TJ Tstg TL
Notes:
Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current
(Note 1)
FGA120N30D
300 30 @ TC = 25C @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C 120 300 10 40 290 116 -55 to +150 -55 to +150 300
Units
V V A A A A W W C C C
Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
(1) Repetitive test , pulse width = 100usec , Duty = 0.5 * Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RJC(IGBT) RJC(DIODE) RJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient
Typ.
----
Max.
0.43 1.56 40
Units
C/W C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
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FGA120N30D Rev. A
FGA120N30D 300V PDP IGBT
Package Marking and Ordering Information
Device Marking
FGA120N30D
Device
FGA120N30D
Package
TO-3P
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 250A VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
300 ----
-0.6 ---
--100 250
V V/C A nA
On Characteristics VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE IC = 25A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 120A, VGE = 15V IC = 120A, VGE = 15V, TC = 125C 2.5 ---4.0 1.1 1.9 2.0 5.0 1.4 --V V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2310 360 100 pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 200V, IC = 25A, VGE = 15V VCC = 200V, IC = 25A, RG = 8.7, VGE = 15V, Resistive Load, TC = 125C VCC = 200V, IC = 25A, RG = 8.7, VGE = 15V, Resistive Load, TC = 25C -----------------30 270 100 130 0.17 0.56 0.73 30 280 105 180 0.18 0.9 1.08 120 15 60 ---300 ----------180 22 90 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
2 FGA120N30D Rev. A
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FGA120N30D 300V PDP IGBT
Electrical Characteristics of DIODE T
Symbol
VFM trr Irr Qrr
C
= 25C unless otherwise noted
Parameter
Diode Forward Voltage IF = 10A
Test Conditions
TC = 25C TC = 125C TC = 25C TC = 125C TC = 25C TC = 125C TC = 25C TC = 125C
Min.
---------
Typ.
1.1 0.9 21 35 2.8 5.6 29.4 98
Max.
1.4 --------
Units
V
Diode Reverse Recovery Time
IF = 10A dI/dt = 200A/s
ns
Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
A
nC
3 FGA120N30D Rev. A
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FGA120N30D 300V PDP IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180 T C = 25 C 150 20V
150
o
Figure 2. Typical Output Characteristics
180 T C = 125 C 20V 15V 120 10V
o
12V
Collector Current, IC [A]
15V 120 12V 10V
Collector Current, IC [A]
90
90 V G E =8V
60 V G E =8V 30
60
30
0 0 2 4 6
0 0 2 4 6
Collector-Em itter Voltage, V CE [V]
C ollector-E m itter V oltage, V C E [V ]
Figure3. Typical Saturation Voltage Characteristics
150 C o m m o n E m itte r V GE = 15V
Figure 4. Transfer characteristics
200 100 C o m m o n E m itte r V CE = 2 0V TC = 25 C
o o
Collector Current, IC [A]
120
TC = 125 C 90
o
Ic , Collector Current [A]
TC =
25 C
o
T C = 125 C
10
60
30
0 0 .0 0 .5 1 .0 1 .5 2 .0 2 .5 3 .0
1 0 2 4 6 8 10
C o llecto r-E m itte r V o lta g e , V C E [V ]
V C E , G a te T o E m itte r V o lta g e [V ]
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
2 .4
6
Collector-Emitter Voltage, VCE [V]
C o m m o n E m itte r V GE = 15V 2 .0 12 0 A
CE
C o m m o n E m it t e r o TC = 25 C
Collector - Emitter Voltage, V
[V]
5
4
1 .6 50A 1 .2 25A
3 120A 2 50A 25A 1 1 2 .5 A
0 .8
I C = 1 2.5 A
0 .4 25 50 75
o
0
100
125
4
8
12
16
20
C ase Te m pera ture , T C [ C ]
G a t e - E m it t e r V o lt a g e , V G E [ V ]
4 FGA120N30D Rev. A
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FGA120N30D 300V PDP IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
6 C o m m o n E m itte r o TC = 125 C
(Continued)
Figure 8. Capacitance Charaacteristics
5000 C ies 4000 C om m on E m itter V G E = 0V , f = 1M H z T C = 25 C C oes 3000
o
CE
[V]
5
Collector - Emitter Voltage, V
4
3
120A
Capacitance [pF]
2000
C res
2 25A 1 1 2 .5 A 0 4 8
50A
1000
0
12 16 20
0.1
1
10
30
G a t e - E m it te r V o lta g e , V G E [V ]
C ollector-Em itter V oltage, V C E [V ]
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
14
C om m on E m itter RL = 8 T C = 25 C
o
1000 Ic M A X (P ulsed) 50s Ic M A X (C ontinuous) 100 1m s D C O peration 10 100s
Gate-Emitter Voltage, VGE [V]
12 10 8 6 4 2 0 0
V cc = 200V
Collector Current, Ic [A]
1
S ingle N onrepetitive o P ulse Tc = 25 C C urves m ust be derated linearly w ith increase in tem perature 0.1 1 10 100 1000
0.1
30
60
90
120
150
G a te C h a rg e, Q g [n C ]
C ollector - E m itter V o ltage, V C E [V ]
Figure 11. Turn-On Characteristics vs. Gate Resistance
1000
Figure 12. Turn-Off Characteristics vs. Gate Resistance
10 00
tr
td (off)
Switching Time [ns]
100 td(on)
C om m on Em itter V C C = 200V, V G E = 15V I C = 25A T C = 25 C T C = 125 C
o o
Switching Time [ns]
tf 1 00
C o m m o n E m itte r V C C = 2 00 V , V G E = 15 V I C = 25A T C = 25 C 10 T C = 12 5 C 0 10 20 30 40 50
o o
10 0 10 20 30 40 50
Gate R esistance, R G [ ]
G a te R e sista nce, R G [ ]
5 FGA120N30D Rev. A
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FGA120N30D 300V PDP IGBT
Typical Performance Characteristics
Figure 13. Turn-On Characteristics vs. Collector Current
C om m on E m itter V CC = 200V, V GE = 15V R G = 8.7 T C = 25 C T C = 125 C
o o
(Continued)
Figure 14.Turn-Off Characteristics vs. Collector Current
1000
1000
tr
Switching Time [ns]
Switching Time [ns]
tf
100 td(off)
100 td(on)
C om m on Em itter V C C = 200V,V G E = 15V R G =8.7 T C = 25 C
o
10 0 20 40 60 80 100 120
10 0 20 40 60
T C = 125 C 80 100 120
o
C ollector C urrent, I C [A ]
C ollector C urrent, I C [A ]
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs. Collector Current
C om m on E m itter V C C = 200V , V G E = 15V I D = 25A T C = 25 C
o
10
C om m on E m itter V C C = 200V ,V G E = 15V R G = 5 T C = 25 C
o
E off
Switching Loss [mJ]
1
Switching Loss [mJ]
T C = 125 C
o
E off
T C = 125 C
o
E on 1
E on
0.1 0 10 20 30 40 50
0.1 0 20 40 60 80 100 120
G a te R e sista n ce , R G [ ]
C o lle cto r C urre n t, I C [A ]
Figure 17. Turn-Off SOA Figure
1000 Safe O perating Area o V GE = 20V, T C = 100 C
Collector Current, IC [A]
100
10 1 10 100 1000
Collector-Emitter Voltage, V C E [V]
6 FGA120N30D Rev. A
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FGA120N30D 300V PDP IGBT
Typical Performance Characteristics
(Continued)
Figure 18. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5 0.1 0.2 0.1 0.05 0.01
Pdm
0.02 0.01 single pulse
t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Figure 19. Forward Characteristics
Figure 20. Typical Reverse Recovery Current
5 I F = 10A Reverse Recovery Current , Irr [A]
100 T J = 125 C
o
Forward Current , IF [A]
4
T C = 25 C
o
10
T J = 25 C
o
3
2
1
1
T C = 25 C 0.1 0.0 0.5 1.0 1.5 T C = 125 C 2.0 2.5
o
o
0 100 di/dt [A/s]
500
Forw ard Voltage , V F [V]
Figure 21. Typical Reverse Recovery Time
36 IF = 10A Reverse Recovery Time , trr [ns] Tc = 25 C 32
o
28
24 100 di/dt [A/s]
500
7 FGA120N30D Rev. A
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FGA120N30D 300V PDP IGBT
Mechanical Dimensions
TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
8 FGA120N30D Rev. A
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FGA120N30D 300V PDP IGBT
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I19
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
9 FGA120N30D Rev. A
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